▎ 摘　　要

Data retention of nano-sized conducting filaments is a critical reliability issue in the pursuit of low-power graphene oxide-based resistive switching (RS) memory devices. Herein, an improvement in the low resistance state retention is demonstrated in fabricated oxidized carbon quantum dot (OCQD)-graphene oxide nanocomposites. Reliable RS characteristics with good retention properties were achieved instead of volatile switching, even with a relatively low compliance current of 100 A. More epoxy groups were introduced as the concentration of embedded OCQDs was increased, resulting in a larger high resistance state, a higher set voltage, and deeper trapping levels. The dependence of the set switching time on the temperature acts as experimental verification that the oxygen migration energy barrier E-a was improved from 0.37 to 0.78 eV after embedding the OCQDs, which explains the enhancement of the low resistance state retention based on a filamentary model.