▎ 摘　　要

Pristine graphene oxide thin film field effect transistors were fabricated on Si substrates without an additional reduction process. Graphene oxide with an optical band gap of 1.7 eV showed p-type semiconducting behaviour in air and ambipolarity under vacuum. The temperature dependence of conductance confirmed these semiconducting characteristics. I-V characteristics were well fitted to a variable range hopping model with 2 + 3 dimensionality, in good contrast to the 2D fitting in the reduced graphene oxide.