• 文献标题:   Temperature Dependence of Raman-Active In-Plane E-2g Phonons in Layered Graphene and h-BN Flakes
  • 文献类型:   Article
  • 作  者:   LI XL, LIU J, DING K, ZHAO XH, LI S, ZHOU WG, LIANG BL
  • 作者关键词:   graphene, hbn, inplane e2g phonon, temperature dependence
  • 出版物名称:   NANOSCALE RESEARCH LETTERS
  • ISSN:   1556-276X
  • 通讯作者地址:   Hebei Univ
  • 被引频次:   2
  • DOI:   10.1186/s11671-018-2444-2
  • 出版年:   2018

▎ 摘  要

Thermal properties of sp(2) sysems such as graphene and hexagonal boron nitride (h-BN) have attracted significant attention because of both systems being excellent thermal conductors. This research reports micro-Raman measurements on the in-plane E-2g optical phonon peaks (similar to 1580 cm-1 in graphene layers and similar to 1362 cm(-1) in h-BN layers) as a function of temperature from -194 to 200 degrees C. The h-BN flakes show higher sensitivity to temperature-dependent frequency shifts and broadenings than graphene flakes. Moreover, the thermal effect in the c direction on phonon frequency in h-BN layers is more sensitive than that in graphene layers but on phonon broadening in h-BN layers is similar as that in graphene layers. These results are very useful to understand the thermal properties and related physical mechanisms in h-BN and graphene flakes for applications of thermal devices.