▎ 摘　　要

In this paper, we have proposed a novel graphene microstructure to realize the actively controllable electromagnetically induced transparency (EIT) effect in the low terahertz band. The microstructure is composed of periodic curved cutting line and vertical cutting line arrays. Different from the former near-field coupling directly between bright and dark modes, by breaking the asymmetry of graphene cutting line resonators to stimulate the bright-dark mode coupling, an obvious EIT window can be realized within the frequency range of 0.2 to 1.2 THz. When the Fermi level of graphene increases from 0.4 to 1 eV, the amplitude modulation depth of EIT window (0.647 THz, 0.698 THz and 0.742 THz) can reach up to 82.7%, 79.5% and 85.2%, respectively. Besides, due to its dispersive properties, the realized EIT effect displays a sensitive response to the surrounding medium and the sensitivity can reach as high as 525.1 GHz/RIU. This graphene microstructure based on EIT effect is meaningful in terms of designing terahertz modulators, optical switches and supersensitive sensors in the future.