• 文献标题:   A role for graphene in silicon-based semiconductor devices
  • 文献类型:   Review
  • 作  者:   KIM K, CHOI JY, KIM T, CHO SH, CHUNG HJ
  • 作者关键词:  
  • 出版物名称:   NATURE
  • ISSN:   0028-0836 EI 1476-4687
  • 通讯作者地址:   Samsung Elect
  • 被引频次:   424
  • DOI:   10.1038/nature10680
  • 出版年:   2011

▎ 摘  要

As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.