• 文献标题:   Meta-semiconductor junction of graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   HONG S, YOON Y, GUO J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Florida
  • 被引频次:   46
  • DOI:   10.1063/1.2885095
  • 出版年:   2008

▎ 摘  要

Patterned all-graphene circuits, in which semiconducting graphene nanoribbon (GNR) device channels are connected by metallic GNR interconnects, raise possibilities for carbon-based electronics. The properties of GNR metal-semiconductor junctions, which are the key elements in all-graphene circuits, are studied by atomistic simulations. The junction conductance strongly depends on the atomistic features of the access geometry from the metallic GNR to the semiconducting GNR. Highly localized states exist at the junction edges, which can result in sharp metal-induced gap states. A defect of a single lattice vacancy can significantly increase rather than decrease the junction conductance for certain junction geometries. (c) 2008 American Institute of Physics.