▎ 摘　　要

Graphene nanopatches (GNs) on graphene films grown by chemical vapor deposition (CVD) were synthesized by Ni nanoparticle assembly and subsequent CVD growth to enhance their electrical conductivity. As a result, the sheet resistance of the hexagonally shaped GN-assembled graphene films decreased from 681.7 + 11.2 to 527.2 + 47.0 Omega sq(-1) with 97.9% transparency. This improvement in electrical conductivity was the result of p-type doping of the GNs on graphene films and the generation of additional charge carrier conducting paths to diminish defect scattering, which was a result of the enhanced extracted-hole mobility of the GN-assembled graphene films.