• 文献标题:   Effects of strain on defect-graphene superlattices
  • 文献类型:   Article
  • 作  者:   BARONE VT, TUTTLE BR
  • 作者关键词:  
  • 出版物名称:   AIP ADVANCES
  • ISSN:  
  • 通讯作者地址:   Penn State Behrend
  • 被引频次:   0
  • DOI:   10.1063/5.0018703
  • 出版年:   2020

▎ 摘  要

Defects in graphene provide both a challenge and an opportunity for scientists and engineers. Here, we report first-principles calculations of the mechanical, electronic, and magnetic properties of defect-graphene superlattices involving periodic arrays of vacancy and ring disorder defects. Using the relationship between energy and strain, we quantify the elastic moduli for these defect-graphene superlattices. Compared to pure graphene, the di-vacancy defect superlattice shows the largest change in lattice vectors but only a modest deviation in mechanical properties. Young's modulus for the Stone-Thrower-Wales defect superlattice is found to be dramatically lower than for pure graphene. Strain has only a modest effect on the electronic structure of the defect-graphene superlattices, except for single vacancies in graphene, which display a strain-induced Jahn-Teller bond reconfiguration resulting in a discontinuous magnetic response. The effects detailed here may be exploited for device applications employing defect-graphene superlattices. (c) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).