• 文献标题:   Growth temperature dependent graphene alignment on Ir(111)
  • 文献类型:   Article
  • 作  者:   HATTAB H, N DIAYE AT, WALL D, JNAWALI G, CORAUX J, BUSSE C, VAN GASTEL R, POELSEMA B, MICHELY T, HERINGDORF FJMZ, HORNVON HOEGEN M
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Duisburg Essen
  • 被引频次:   62
  • DOI:   10.1063/1.3548546
  • 出版年:   2011

▎ 摘  要

The morphology of graphene monolayers on Ir(111) prepared by thermal decomposition of ethylene between 1000 and 1530 K was studied with high resolution low energy electron diffraction. In addition to a well-oriented epitaxial phase, randomly oriented domains are observed for growth temperatures between 1255 and 1460 K. For rotational angles of +/- 3 degrees around 30 degrees these domains lock-in in a 30 degrees oriented epitaxial phase. Below 1200 K the graphene layer exhibits high disorder and structural disintegrity. Above 1500 K the clear moire spots reflect graphene in a single orientation epitaxial incommensurate phase. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3548546]