▎ 摘　　要

In this paper, a position-sensitive detector (PSD) with an enhanced position detection performance has been proposed using graphene-silicon-on-insulator (GSOI) structure. By introducing the gate manipulation, the separation efficiency and diffusion speed of the photo-induced charges have been greatly improved. We experimentally observe a 10-fold increase in the generated photocurrent and the response time is shorten by around 8 times, compared to the counterpart without modulation. High position sensitivity (518 mu A/mm) to weak-light-sensing, long-distance-sensing (1.2 mm) and good linearity (nonlinearity <2%) are also achieved. The proposed device concept also provides a guidance to improve the performance of other kind of two-dimensional materials based PSDs. (C) 2021 Elsevier Ltd. All rights reserved.