• 文献标题:   A study on the graphene incorporated direct-patternable SnO2 thin film
  • 文献类型:   Article
  • 作  者:   KIM H, YUN MK, PARK HH
  • 作者关键词:   directpatterning, graphene, sno2 thin film, transparent conducting oxide
  • 出版物名称:   PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE
  • ISSN:   1862-6300
  • 通讯作者地址:   Yonsei Univ
  • 被引频次:   4
  • DOI:   10.1002/pssa.201026770
  • 出版年:   2011

▎ 摘  要

The electrical property of direct-patternable SnO2 thin film was improved by the incorporation of graphene. Graphene were incorporated into SnO2 photosensitive solution and the direct-patternable film was prepared by photochemical solution deposition. The incorporation of graphene into SnO2 films slightly reduced the transmittance of the films due to light scattering by the incorporated graphene. In addition, with incorporation of graphene, the crystallinity of the SnO2 thin films was decreased slightly and the resistivity was improved due to an enhancement of mobility because of the pi-bond nature of surface on graphene. Direct-patterning of graphene incorporated SnO2 thin films was performed without photoresist or etching process. These results suggest that a micropatterned system can be simply fabricated at a low cost and the electrical properties of SnO2 films can be improved by incorporating graphene. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim