• 文献标题:   All-Graphene Nano-Ribbon FET Based Complete FPGA Design
  • 文献类型:   Article
  • 作  者:   KASHANI SAS, ALIDASH HK, FILABADI HS
  • 作者关键词:   gnrfet, graphene fpga, i/o block
  • 出版物名称:   ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY
  • ISSN:   2162-8769 EI 2162-8777
  • 通讯作者地址:   Univ Kashan
  • 被引频次:   0
  • DOI:   10.1149/2162-8777/ab8062
  • 出版年:   2020

▎ 摘  要

FPGA is among the most successful digital IC. Though initially targeted for prototyping, but received more attention even in small volume production. However, that success is under threat since Silicon is reaching physical limitations. According to ITRS, towards the sub-nanometer regime, various second-order effects affect the functionality and reduces the performance of the device. Research on alternative materials indicates that Graphene is the most attractive candidate, and field-effect transistors using Graphene Nano-Ribbons Field Effect Transistors (GNRFETs) are promising because of their excellent properties. Toward all-Graphene microelectronics, and due to FPGA position in digital design, Graphene-based FPGA needs to be designed, analyzed, and evaluated. This paper explores FPGA design based on GNRFETs. It studies the design and characterization of all parts of a Graphene-based simple FPGA which could be a configurable logic structure for future microelectronics. It covers main parts, by design and characterization of Configurable Logic Block, routing switch, and I/O block, all based on GNRFET. The results as 47 ps delay for output and 23 ps for input proves feasibility, and indicate that proposed C-FPGA designs are much faster than conventional silicon-based counterparts. Power Delay Product of proposed CLB element is 5.3 times lesser than those of silicon counterparts. (C) 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.