• 文献标题:   Low bias short channel impurity mobility in graphene from first principles
  • 文献类型:   Article
  • 作  者:   WANG Z, KE YQ, LIU DP, GUO H, BEVAN KH
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   McGill Univ
  • 被引频次:   10
  • DOI:   10.1063/1.4748326
  • 出版年:   2012

▎ 摘  要

In theory, graphene should exhibit very high carrier mobility, however its measured mobility is usually much lower. This discrepancy between theory and empirical observations is believed to be due to disordered scattering. We present a systematic first principles study of diffusive impurity scattering in short channel graphene. We achieve good agreement with experimental data and show that mobility in graphene is strongly influenced by impurity scattering. In general, the results show that diffusive scattering can play a key role in determining the carrier transport properties of short channel devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748326]