• 文献标题:   Electron scattering in graphene by defects in underlying h-BN layer: First-principles transport calculations
  • 文献类型:   Article
  • 作  者:   KANEKO T, OHNO T
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Natl Inst Mat Sci
  • 被引频次:   1
  • DOI:   10.1063/1.5021845
  • 出版年:   2018

▎ 摘  要

We investigate the electronic structure and the transport properties of graphene adsorbed onto h-BN with carbon impurities or atomic vacancies using density functional theory and the non-equilibrium Green's function method. We find that the transport properties are degraded due to carrier doping and scattering off of localized defect states in h-BN. When graphene is doped by introducing defects in h-BN, the transmission spectra become asymmetric owing to the reduction of the electronic density of states, which contributes significantly to the degradation of graphene transport properties as compared with the effect of defect levels. Published by AIP Publishing.