• 文献标题:   One-Pot Synthesis of h-BN Fullerenes Usinsg a Graphene Oxide Template
  • 文献类型:   Article
  • 作  者:   KIM SS, VAN KHAI T, KWON YJ, KATOCH A, WU P, KIM HW
  • 作者关键词:   semiconductor, fullerene, chemical synthesi, transmission electron microscopy tem, raman spectroscopy
  • 出版物名称:   METALS MATERIALS INTERNATIONAL
  • ISSN:   1598-9623 EI 2005-4149
  • 通讯作者地址:   Hanyang Univ
  • 被引频次:   0
  • DOI:   10.1007/s12540-015-5043-0
  • 出版年:   2015

▎ 摘  要

Hexagonal-boron nitride (h-BN) fullerenes were synthesized from a graphene oxide (GO) template by simultaneously heating the GO and B2O3 in the presence of NH3 gas. Transmission electron microscopy (TEM) observations revealed that a considerable amount of product had a fullerene-like nanostructure. Typical BN fullerenes have a polyhedral shape, being hollow nanocages. Lattice-resolved TEM and X-ray diffraction consistently demonstrated the formation of h-BN fullerenes. The FTIR spectrum exhibited absorption bands at approximately 800 and 1378 cm(-1), which were related to the h-BN structure. The Raman spectra exhibited peaks at 1368 and 1399 cm(-1), which can be related to BN sheets and BN fullerenes, respectively. The photoluminescence spectrum of the h-BN fullerenes taken at 8 K exhibited intense white-light emission. To reveal the origin of the broad emission band, which could be a superimposition of several peaks, we used a deconvolution procedure based on Gaussian functions. We proposed a growth mechanism of the h-BN fullerenes and verified it with a thermodynamic calculation. This work provides a cost-effective approach to synthesize fullerene-type boron nitride on a production scale.