• 文献标题:   Spin-Polarized Semiconducting Band Structure of Monolayer Graphene on Ni(111)
  • 文献类型:   Article
  • 作  者:   ZHANG Y, SUI XL, MA DL, BAI KK, DUAN WH, HE L
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW APPLIED
  • ISSN:   2331-7019
  • 通讯作者地址:   Beijing Normal Univ
  • 被引频次:   0
  • DOI:   10.1103/PhysRevApplied.10.054043
  • 出版年:   2018

▎ 摘  要

The magnetic properties of graphene have attracted much attention for more than a decade. Recent studies have shown that adatoms or atomic vacancies in graphene could exhibit localized magnetic moments. However, a macroscopic spin-polarized semiconducting band structure has never been experimentally realized in graphene. Here, we demonstrate that a graphene monolayer, hybridized with an underlying Ni(111) substrate, exhibits a spin-polarized semiconducting state even at room temperature. Our spin-polarized scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, explicitly demonstrate that the interaction between graphene and the Ni substrate generates a large gap in graphene and simultaneously leads to a relative shift between majority- and minority-spin bands. Consequently, the graphene sheet on the Ni substrate exhibits a spin-polarized gap with an energy of several tens of meV even at room temperature.