• 文献标题:   Structural and Electrical Investigation of C-60-Graphene Vertical Heterostructures
  • 文献类型:   Article
  • 作  者:   KIM K, LEE TH, SANTOS EJG, JO PS, SALLEO A, NISHI Y, BAO ZN
  • 作者关键词:   graphene, c60, vertical transistor, organic semiconducting molecule, vertical heterostructure
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Stanford Univ
  • 被引频次:   89
  • DOI:   10.1021/acsnano.5b00581
  • 出版年:   2015

▎ 摘  要

Graphene, with its unique electronic and structural qualities, has become an important playground for studying adsorption and assembly of various materials including organic molecules. Moreover, organic/graphene vertical structures assembled by van der Waals interaction have potential for multifunctional device applications. Here, we investigate structural and electrical properties of vertical heterostructures composed of C-60 thin film on graphene. The assembled film structure of C-60 on graphene is investigated using transmission electron microscopy, which reveals a uniform morphology of C-60 film on graphene with a grain size as large as 500 nm. The strong epitaxial relations between C-60 crystal and graphene lattice directions are found, and van der Waals ab initio calculations support the observed phenomena. Moreover, using C-60 graphene heterostructures, we fabricate vertical graphene transistors incorporating n-type organic semiconducting materials with an on/off ratio above 3 x 10(3). Our work demonstrates that graphene can serve as an excellent substrate for assembly of molecules, and attained organic/graphene heterostructures have great potential for electronics applications.