▎ 摘　　要

The mobilities of graphene grown on single-orientation Cu (111), (220), and (200) substrates with sizes of 4-in. were measured, and the graphene nucleation shapes were characterized in the early growth stage so that their relationship with the electrical properties of the fully grown graphene could be determined. The graphene grown on Cu (111) substrates, where the structures match well with a lattice mismatch of only 3.8%, has a relatively high mobility. The rectangular shape on Cu (111) in the initial stage has the potential to minimize the number of defects, paving the way for the development of high-performance graphene devices. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802719]