▎ 摘　　要

One of the most important characteristics of graphene-based nanodevices is the quantum capacitance (QC) of the channel which plays a dominant role in governing the device performance. Moreover, QC can be utilized to realize various types of high performance sensors and energy storage devices. In the present work, the effect of in-plane uniaxial strain on the QC of GNR-based devices is investigated utilizing a compact analytical model which accounts for several finite-size and edge effects. Carrier density and QC are calculated for the three distinct families of armchair GNRs. The strong modulation of QC by uniaxial strain is related to strain-induced changes in both bandgap and effective mass of GNRs. Our study could be helpful for designing GNR-based nanodevices in the Quantum Capacitance Limit.