▎ 摘　　要

The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n and p regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the n and p regions in the electrically induced n-i-p junctions under the reverse bias is calculated as well. It is shown that in the electrically induced n-i-p junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such n-i-p junctions can be used in different electron and optoelectronic devices.