• 文献标题:   Layer-by-Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrate
  • 文献类型:   Article
  • 作  者:   SIMON S, VOLOSHINA E, TESCH J, FORSCHNER F, ENENKEL V, HERBIG C, KNISPEL T, TRIES A, KROGER J, DEDKOV Y, FONIN M
  • 作者关键词:   graphene, landau level, scanning tunneling microscopy
  • 出版物名称:   SMALL
  • ISSN:   1613-6810 EI 1613-6829
  • 通讯作者地址:   Univ Konstanz
  • 被引频次:   5
  • DOI:   10.1002/smll.201703701
  • 出版年:   2018

▎ 摘  要

The electronic properties of graphene can be efficiently altered upon interaction with the underlying substrate resulting in a dramatic change of charge carrier behavior. Here, the evolution of the local electronic properties of epitaxial graphene on a metal upon the controlled formation of multilayers, which are produced by intercalation of atomic carbon in graphene/Ir(111), is investigated. Using scanning tunneling microscopy and Landau-level spectroscopy, it is shown that for a monolayer and bilayers with small-angle rotations, Landau levels are fully suppressed, indicating that the metal-graphene interaction is largely confined to the first graphene layer. Bilayers with large twist angles as well as twisted trilayers demonstrate a sequence of pronounced Landau levels characteristic for a free-standing graphene monolayer pointing toward an effective decoupling of the top layer from the metal substrate. These findings give evidence for the controlled preparation of epitaxial graphene multilayers with a different degree of decoupling, which represent an ideal platform for future electronic and spintronic applications.