• 文献标题:   The Role of the Graphene Oxide (GO) and Reduced Graphene Oxide (RGO) Intermediate Layer in CZTSSe Thin-Film Solar Cells
  • 文献类型:   Article
  • 作  者:   JEONG WL, PARK SH, JHO YD, JOO SK, LEE DS
  • 作者关键词:   cu2znsn s, se 4, thinfilm solar cell, graphene oxide, intermediate layer, back contact
  • 出版物名称:   MATERIALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.3390/ma15103419
  • 出版年:   2022

▎ 摘  要

Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells with low cost and eco-friendly characteristics are attractive as future sources of electricity generation, but low conversion efficiency remains an issue. To improve conversion efficiency, a method of inserting intermediate layers between the CZTSSe absorber film and the Mo back contact is used to suppress the formation of MoSe2 and decomposition of CZTSSe. Among the candidates for the intermediate layer, graphene oxide (GO) and reduced GO have excellent properties, including high-charge mobility and low processing cost. Depending on the type of GO, the solar cell parameters, such as fill factor (FF), were enhanced. Thus, the conversion efficiency of 6.3% was achieved using the chemically reduced GO intermediate layer with significantly improved FF.