▎ 摘　　要

We study pressure control of transport properties in graphene-based FMB/FM junction where FMs are ferromagnetic graphene regions and B is graphene/MoS2 heterostructure barrier. In graphene/MoS(2 )heterostructure region, the Fermi energy has been found to be linearly pressure-dependent. Therefore, it is possible to control the currents by pressure in the presented structure. In non-magnetic junction, it was found that, the charge current depends almost linearly on pressure near the Dirac point. We find that the Dirac point can be shifted by varying back gate potential. The correlation between current and pressure in the junction may lead to applications for pressure sensors and pressure transistors. In magnetic junction, we predicted that the switching of spin polarization may occur at a specific pressure and spin current may be linearly controlled by pressure near the Dirac point. The results reveal the potentials of graphene/MoS2 heterostructure for applications in pressure-controlled charge current and spin current devices.