▎ 摘　　要

Modulation of carrier density in graphene has been demonstrated on single-crystalline or polymer ferroelectrics as gating dielectric. However, its tuning from p-type to n-type in air at room temperature has not yet been reported. In this paper, such a tuning is realized on polycrystalline PbZr0.52Ti0.48O3 (PZT) ceramic under polarization field in the range of -22.5 kV/cm to 22.5 kV/cm through the construction of a "graphene/PZT + suspended graphene" network film. The maximum hole and electron density of graphene in our fabricated Hall bar device are measured to be 6.3 x 10(13) cm(-2) and 1.7 x 10(13) cm(-2) respectively. There exhibit certain features in graphene's Raman spectrums corresponding to its transition from p-type to n-type with relationship to the PZT surface morphology and the contact status between graphene and PZT surface. At last, an in-plane graphene PN junction is demonstrated on PZT ceramic as well.