• 文献标题:   Graphene thermal flux transistor
  • 文献类型:   Article
  • 作  者:   SHAFRANJUK SE
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Northwestern Univ
  • 被引频次:   6
  • DOI:   10.1039/c6nr07246a
  • 出版年:   2016

▎ 摘  要

Insufficient flexibility of existing approaches to controlling the thermal transport in atomic monolayers limits their capability for use in many applications. Here, we examine the means of electrode doping to control the thermal flux Q due to phonons propagating along the atomic monolayer. We found that the frequency of the electron-restricted phonon scattering strongly depends on the concentration nC. of the electric charge carriers, established by the electric potentials applied to local gates. As a result of the electrode doping, nC is increased, causing a sharp rise in both the electrical conductivity and Seebeck coefficient, while the thermal conductivity tumbles. Therefore, the effect of the thermal transistor improves the figure of merit of nanoelectronic circuits.