• 文献标题:   Reverse degradation of nickel graphene junction by hydrogen annealing
  • 文献类型:   Article
  • 作  者:   ZHANG ZJ, YANG F, AGNIHOTRI P, LEE JU, LLOYD JR
  • 作者关键词:  
  • 出版物名称:   AIP ADVANCES
  • ISSN:   2158-3226
  • 通讯作者地址:   SUNY Albany
  • 被引频次:   4
  • DOI:   10.1063/1.4941572
  • 出版年:   2016

▎ 摘  要

Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 C-0) is an effective technique to reverse the degradation. (C) 2016 Author(s).