• 文献标题:   Role of 3D-paired pentagon-heptagon defects in electronic and transport properties of zigzag graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   FOTOOHI S, MORAVVEJFARSHI MK, FAEZ R
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING
  • ISSN:   0947-8396 EI 1432-0630
  • 通讯作者地址:   Islamic Azad Univ
  • 被引频次:   5
  • DOI:   10.1007/s00339-013-8120-6
  • 出版年:   2014

▎ 摘  要

Electronic and transport properties of 11 zigzag graphene nanoribbons (11-z-GNRs) with two types of 3D-paired pentagon-heptagon defects (3D-PPHDs) are studied using density functional theory combined with non-equilibrium Green's function method. The C ad-dimers that have been introduced to z-GNRs to form these 3D-PPHDs have induced local strains forcing the C-bonds in the ad-dimers to hybridize in sp(3)-like rather than sp(2)-like orbitals. Such transformations that cause extra electrons to accumulate around the 3D-PPHDs are responsible for the variations in the electronic and transport properties of the defected z-GNRs. Density of states (DOS) for 11-z-GNRs containing either type of 3D-PPHDs, compared with that of the pristine 11-z-GNR, exhibits a peak at a particular energy level below the Fermi level, within its first plateau. Each peak, corresponding to a dip in the related zero-bias conductance profile, is attributed to electrons trapped in the localized states around the same energy level. The current-voltage (I-V) characteristics are almost linear for 11-z-GNR defected by either type of 3D-PPHD. Presence of a 3D-PPHD, made by addition of a single C ad-dimer, above an 11-z-GNR super-cell decreases its average conductance by 10.7 %, while a 3D-PPHD made by addition of two C ad-dimers to the opposite sides of the same 11-z-GNR super-cell decreases its conductance by 23 %.