▎ 摘　　要

Recently, ion gated oxide transistors are becoming increasingly interesting because of their low operation voltage and unique electric-field-induced surface phenomena. In this work, multi-gate indium tin oxide (ITO) neuron transistors are fabricated. Poly (vinyl alcohol)/graphene oxide hybrid electrolyte films are used as gate dielectrics. The hybrid electrolyte film demonstrates a high specific capacitance of similar to 2 mu F cm(-2) at 1.0 Hz. Good electrical performances are demonstrated, including a high ON/OFF ratio of similar to 4 x 10(6) and a high electron mobility of similar to 6.7 cm(2) V-1 s(-1). Most importantly, 'NOT', 'AND' and 'NAND' logic circuits were demonstrated by using one transistor/one resistor structures. Unified logical definitions of low potential of 2 V and -2 V are used for logic state of '1' and '0', respectively. The proposed multi-gate ITO-based neuron transistors have potential applications in portable electronics.