• 文献标题:   Fully Printed Inverters using Metal-Oxide Semiconductor and Graphene Passives on Flexible Substrates
  • 文献类型:   Article, Early Access
  • 作  者:   SINGARAJU SA, MARQUES GC, GRUBER P, KRUK R, HAHN H, BREITUNG B, AGHASSIHAGMANN J
  • 作者关键词:   flexible device, fully printed device, inverter, metaloxide transistor, printed graphene, tensile strength
  • 出版物名称:   PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS
  • ISSN:   1862-6254 EI 1862-6270
  • 通讯作者地址:   Karlsruhe Inst Technol KIT
  • 被引频次:   0
  • DOI:   10.1002/pssr.202000252 EA JUN 2020
  • 出版年:  

▎ 摘  要

Printed and flexible metal-oxide transistor technology has recently demonstrated great promise due to its high performance and robust mechanical stability. Herein, fully printed inverter structures using electrolyte-gated oxide transistors on a flexible polyimide (PI) substrate are discussed in detail. Conductive graphene ink is printed as the passive structures and interconnects. The additive printed transistors on PI substrates show anIon/Ioffratio of106and show mobilities similar to the state-of-the-art printed transistors on rigid substrates. Printed meander structures of graphene are used as pull-up resistances in a transistor-resistor logic to create fully printed inverters. The printed and flexible inverters show a signal gain of 3.5 and a propagation delay of 30 ms. These printed inverters are able to withstand a tensile strain of 1.5% following more than 200 cycles of mechanical bending. The stability of the electrical direct current (DC) properties has been observed over a period of 5 weeks. These oxide transistor-based fully printed inverters are relevant for digital printing methods which could be implemented into roll-to-roll processes.