▎ 摘　　要

Graphene oxide (GO), one of the best transparent substrates for electron microscopy of biological substances, is known to be not very stable to exposure to electron beams (e-beams). We present a method of the preparation of GO film highly resistive to e-beams by controlling layer-by-layer thickness and quantitatively examined the stability of GO film thus prepared. Scanning transmission electron microscopic measurements were engaged in these films with 10-kV acceleration-voltage. A simple method is proposed to classify the layer structure of GO. As an application of the method, we determined the electron attenuation length through GO film in nm scale.