• 文献标题:   Graphene growth on epitaxial Ru thin films on sapphire
  • 文献类型:   Article
  • 作  者:   SUTTER PW, ALBRECHT PM, SUTTER EA
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Brookhaven Natl Lab
  • 被引频次:   75
  • DOI:   10.1063/1.3518490
  • 出版年:   2010

▎ 摘  要

Single crystalline Ru(0001) thin films epitaxially grown on sapphire (0001) substrates were used as sacrificial metal templates for the synthesis of high-quality graphene with uniform monolayer thickness and full surface coverage. Removal of the metal template by etching transferred monolayer graphene with good crystal quality onto the insulating sapphire support. Our findings demonstrate epitaxial Ru(0001) films on sapphire (0001) as a substrate for the scalable synthesis of high-quality graphene for applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518490]