• 文献标题:   Electrolyte-induced modulation of electronic transport in the presence of surface charge impurities on bilayer graphene
  • 文献类型:   Article
  • 作  者:   AKRAM KB, HASSAN MU, KARIM A, MEHMOOD M, RAFIQ MA, SABAHAT S, MANZOOR S
  • 作者关键词:   charge mobility, coplanar gate transistor, electrolyte gating, graphene field effect transistor, scattering mechanism
  • 出版物名称:   PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE
  • ISSN:   1862-6300 EI 1862-6319
  • 通讯作者地址:   COMSATS Inst Informat Technol
  • 被引频次:   1
  • DOI:   10.1002/pssa.201700156
  • 出版年:   2017

▎ 摘  要

Transport properties of liquid electrolyte-gated bilayer graphene (BLG) were investigated in the presence of scattering centers introduced post-growth. The scattering centers were realized by spin-deposition of phosphine stabilized gold nanoparticles (AuNPs) of different molar concentrations (10, 20, 30, and 40nM) directly on top of the BLG surface. Electronic transport in such samples exhibits a cluster-like scattering behavior, that is, a decrease in charge carrier mobility accompanied by a shift of the Dirac point toward negative values with increasing density of scattering centers, indicating the n-type doping of graphene by AuNPs. The characteristic resistivity-gate voltage curves show the possibility of anti-ambipolar behavior of such gated BLG films. Drude model based Kinetic Monte Carlo (KMC) simulations agree with our experimental findings and theoretically predicted behavior. Our results support the possibility of a charge carrier modulation of graphene via foreign impurity scattering introduced on its surface, as well as by the means of large electrostatic fields obtained via the liquid electrolyte gating.