• 文献标题:   Influence of copper crystal surface on the CVD growth of large area monolayer graphene
  • 文献类型:   Article
  • 作  者:   ZHAO L, RIM KT, ZHOU H, HE R, HEINZ TF, PINCZUK A, FLYNN GW, PASUPATHY AN
  • 作者关键词:   stm, graphene
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Columbia Univ
  • 被引频次:   153
  • DOI:   10.1016/j.ssc.2011.01.014
  • 出版年:   2011

▎ 摘  要

We study the influence of the surface structure of copper single crystals on the growth of large area monolayer graphene by chemical vapor deposition (CVD) in ultra-high vacuum (UHV). Using atomic-resolution scanning tunneling microscopy (STM), we find that graphene grows primarily in registry with the underlying copper lattice for both Cu(111) and Cu(100). The graphene has a hexagonal superstructure on Cu(111) with a significant electronic component,whereas it has a linear superstructure on Cu(100). Graphene on Cu(111) forms a microscopically uniform sheet, the quality of which is determined by the presence of grain boundaries where graphene grains with different orientations meet. Graphene grown on Cu(100) under similar conditions does not form a uniform sheet and instead displays exposed nanoscale edges. Our results indicate the importance of the copper crystal structure on the microstructure of graphene films produced by CVD. (C) 2011 Elsevier Ltd. All rights reserved.