▎ 摘　　要

We present a novel graphene-based-device concept for a high-frequency operation: a hot-electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows terahertz operation. Based on energy-band considerations, we propose a specific material solution that is compatible with SiGe process lines.