• 文献标题:   Graphene based field effect transistors: Efforts made towards flexible electronics
  • 文献类型:   Review
  • 作  者:   SHARMA BK, AHN JH
  • 作者关键词:   graphene, field effect transistor, flexible electronic, chemical vapor deposition
  • 出版物名称:   SOLIDSTATE ELECTRONICS
  • ISSN:   0038-1101 EI 1879-2405
  • 通讯作者地址:   Yonsei Univ
  • 被引频次:   48
  • DOI:   10.1016/j.sse.2013.08.007
  • 出版年:   2013

▎ 摘  要

The integration of flexibility in existing electronics has been realized as a key point for practical application of unusual format electronics that can extend the application limit of biomedical equipments and of course daily routine kind of electronic devices. Graphene showed the great potentiality for flexible format owing to its excellent electronic, mechanical and optical properties. Field effect transistor (FET) is a basic unit for digital and analog electronics thus enormous efforts have been attempted to fabricate the flexible FETs in order to get the high performance. This article reviews the recent development of graphene based FETs including the fabrication and active layers material compatibility in flexible format. (C) 2013 Elsevier Ltd. All rights reserved.