• 文献标题:   Graphene Nanoribbon Grids of Sub-10 nm Widths with High Electrical Connectivity
  • 文献类型:   Article
  • 作  者:   KIM N, CHOI S, YANG SJ, PARK J, PARK JH, NGUYEN NN, PARK K, RYU S, CHO K, KIM CJ
  • 作者关键词:   graphene nanoribbon, c60, nucleation seed, chemical vapor deposition, largescale film, electrical conductivity
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.1021/acsami.1c03437 EA JUN 2021
  • 出版年:   2021

▎ 摘  要

Quasi-one-dimensional (1D) graphene nanoribbons (GNRs) have finite band gaps and active edge states and therefore can be useful for advanced chemical and electronic devices. Here, we present the formation of GNR grids via seed-assisted chemical vapor deposition on Ge(100) substrates. Nucleation seeds, provided by unzipped C-60, initiated growth of the GNRs. The GNRs grew toward two orthogonal directions in an anisotropic manner, templated by the single crystalline substrate, thereby forming grids that had lateral stitching over centimeter scales. The spatially uniform grid can be transferred and patterned for batch fabrication of devices. The GNR grids showed percolative conduction with a high electrical sheet conductance of similar to 2 mu S.sq and field-effect mobility of similar to 5 cm(2) /(V.s) in the macroscopic channels, which confirm excellent lateral stitching between domains. From transconductance measurements, the intrinsic band gap of GNRs with sub-10 nm widths was estimated as similar to 80 meV, similar to theoretical expectation. Our method presents a scalable way to fabricate atomically thin elements with 1D characteristics for integration with various nanodevices.