• 文献标题:   Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor
  • 文献类型:   Article
  • 作  者:   BANADAKI YM, SRIVASTAVA A
  • 作者关键词:   bandtobandtunneling, graphene nanoribbon fet, localization regime, lineedge roughnes
  • 出版物名称:   ELECTRONICS
  • ISSN:   2079-9292
  • 通讯作者地址:   Louisiana State Univ
  • 被引频次:   8
  • DOI:   10.3390/electronics5010011
  • 出版年:   2016

▎ 摘  要

In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.