• 文献标题:   Effects of growth conditions on the quality of B-doped graphene films
  • 文献类型:   Article
  • 作  者:   YOU Y, WANG C, XU YL, WAN JX, REN W, FANG XH, CHEN XY
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   1
  • DOI:   10.1063/1.4974010
  • 出版年:   2017

▎ 摘  要

Boron-doped graphene (B-doped graphene) films with large area, high quality, and good uniformity are successfully prepared by chemical vapor deposition using ethylboronic acid (C2H7BO2) as the sole precursor. The pre-treatment of the copper foil and post-annealing are introduced to the growth process and proved to be greatly influential to the quality of B-doped graphene. The films prepared are mainly monolayer with the transmittance of about 97.1%, the B/C ratio of about 2.3%, the sheet resistance of 1.5-3 k Omega/square, and the carrier density of 1.13 x 10(13) cm(-2) at room temperature. Published by AIP Publishing.