• 文献标题:   Effect of in situ deposition of Mg adatoms on spin relaxation in graphene
  • 文献类型:   Article
  • 作  者:   SWARTZ AG, CHEN JR, MCCREARY KM, ODENTHAL PM, HAN W, KAWAKAMI RK
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121 EI 1550-235X
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   16
  • DOI:   10.1103/PhysRevB.87.075455
  • 出版年:   2013

▎ 摘  要

We have systematically introduced charged impurity scatterers in the form of Mg adsorbates to exfoliated single-layer graphene and observe little variation of the spin relaxation times despite pronounced changes in the charge transport behavior. All measurements are performed on nonlocal graphene tunneling spin valves exposed in situ to Mg adatoms, thus systematically introducing atomic-scale charged impurity scattering. While charge transport properties exhibit decreased mobility and decreased momentum scattering times, the observed spin lifetimes are not significantly affected, indicating that charged impurity scattering is inconsequential in the present regime of spin relaxation times (similar to 1 ns). DOI: 10.1103/PhysRevB.87.075455