▎ 摘　　要

Graphene is known to have various specific properties, so that many types of graphene devices are proposed and fabricated. Novolac resist is commonly used to fabricate graphene sensors. Because graphene is composed of six-membered rings of carbon atoms, graphene is thought to be contaminated with the novolac resist by pi-pi stacking between graphene and the benzene rings of the novolac resin contained in the novolac resist. The transfer characteristics of graphene field effect transistors (FETs) were used to evaluate the graphene deterioration by fabrication resist. Decreasing the number of novolac resist processes on graphene was effective in suppressing the deterioration of graphene. To avoid the it-it stacking between graphene and the aromatic rings, the novolac resist was changed to the acryl resist, the base resin of which does not contain aromatic rings. The PAG that has a steric hindrance from approaching a graphene sheet was effective in suppressing the deterioration compared with the PAG without the steric hindrance. These measures suppressed the deterioration of graphene and improved the transfer characteristics of graphene FETs.