▎ 摘　　要

Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a period of 100 nm, the lengths of the channel being of 1, 2, 4 or 8 mu m. We have found that the mobility in these 2 mu m-wide transistors varies from about 10400 cm(2)/Vs for a channel length of 1 mu m to about 550 cm(2)/Vs for a channel length of 8 mu m. Irrespective of the mobility value, in all transistors the on-off ratio is at least 10(3) at drain and gate voltages less than 2 V. The channel length-dependent mobility and conductance values indicate the onset of strong localization of charge carriers, whereas the high on-off ratio is due to bandgap opening by nanoperforations.