• 文献标题:   Ultralow-voltage design of graphene PN junction quantum reflective switch transistor
  • 文献类型:   Article
  • 作  者:   SOHIER T, YU B
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   SUNY Albany
  • 被引频次:   7
  • DOI:   10.1063/1.3593956
  • 出版年:   2011

▎ 摘  要

We propose the concept of a graphene-based quantum reflective switch (QRS) for low-power logic application. With the unique electronic properties of graphene, a tilted PN junction is used to implement logic switch function with 10(3) ON/OFF ratio. Carriers are reflected on an electrostatically induced potential step with strong incidence-angle-dependency due to the widening of classically forbidden energies. Optimized design of the device for ultralow-voltage operating has been conducted. The device is constantly ON with a turning-off gate voltage around 180 mV using thin HfO2 as the gate dielectric. The results suggest a class of logic switch devices operating with micropower dissipation. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593956]