• 文献标题:   Tunnel effect causing nonlinear current in few-layer graphene
  • 文献类型:   Article
  • 作  者:   WANG Q, ZHANG J, YUAN SQ, LI XX
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Jiangsu Univ
  • 被引频次:   3
  • DOI:   10.1063/1.4745206
  • 出版年:   2012

▎ 摘  要

Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. This paper mainly focuses on the electrical properties of a few layers of graphene (FLG). The I-V curves of the FLG devices pass though the origin, but the relationship between the voltage and current is nonlinear. This phenomenon may be due to tunneling current when voltage is applied to the FLG. Also, charged impurities on the sample cause shifts in the maximum resistance point in FLG R-V curves, with fewer graphene layers corresponding to larger changes in resistance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745206]