• 文献标题:   Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime
  • 文献类型:   Article
  • 作  者:   MULLER T, GUTTINGER J, BISCHOFF D, HELLMULLER S, ENSSLIN K, IHN T
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Cambridge
  • 被引频次:   17
  • DOI:   10.1063/1.4733613
  • 出版年:   2012

▎ 摘  要

In situ-tunable radio-frequency reflectometry is used for fast charge-detection measurements on a graphene single quantum dot. The variable capacitance of our special matching network both grants tunability and compensates for the large stray capacitance between the charge sensor's contacts and the doped silicon oxide backgate. To demonstrate the high detection bandwidth thus achieved, the rates for tunneling into and out of the dot through the same barrier are determined. Finally, an analytical model for calculating these rates in the multi-level tunneling regime is presented and found to correspond very well to our experimental observations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733613]