▎ 摘　　要

Graphene/Ge/Si heterostructure were fabricated on Si(100) by direct transfer method. The monolayer graphene was transferred onto Ge/Si epilayer with the Raman intensity ratio (I-2D/I-G) of 1.75. The defect related D peak located at 1346 cm(1) is also very weak, signified the small amount of defects. Raman spectroscopy confirmed single crystal Ge film with S-K growth mode was obtained. The lattice mismatch between Ge and Si causes 0.8 degrees off axis of Ge film. The growth mode of Ge film also confirmed as S-K mode when the growth temperature is higher than 650 degrees C, which cause a lower shift of Ge Raman shift peak. (C) 2017 Elsevier B.V. All rights reserved.