• 文献标题:   Graphene mediated Stark shifting of quantum dot energy levels
  • 文献类型:   Article
  • 作  者:   KINNISCHTZKE L, GOODFELLOW KM, CHAKRABORTY C, LAI YM, FALT S, WEGSCHEIDER W, BADOLATO A, VAMIVAKAS AN
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Rochester
  • 被引频次:   3
  • DOI:   10.1063/1.4952611
  • 出版年:   2016

▎ 摘  要

We demonstrate an optoelectronic device comprised of single InAs quantum dots in an n-i-Schottky diode where graphene has been used as the Schottky contact. Deterministic electric field tuning is shown using Stark-shifted micro-photoluminescence from single quantum dots. The extracted dipole moments from the Stark shifts are comparable to conventional devices where the Schottky contact is a semi-transparent metal. Neutral and singly charged excitons are also observed in the well-known Coulomb-blockade plateaus. Our results indicate that graphene is a suitable replacement for metal contacts in quantum dot devices which require electric field control. Published by AIP Publishing.