▎ 摘　　要

Charges trapped in the gate dielectric and acting as long-range scatterers can have a significant effect on carrier transport in graphene-based nanodevices. In this study, we theoretically investigated the charge capture kinetics of short-distance channel-defect interactions in graphene nanoribbon nanodevices by employing the nonradiative multiphonon theory in conjunction with the Coulomb energy (Delta E). The peaks that emerged from the electron capture rate strongly correlated with the singularity characteristics of a one-dimensional (1D) density of states. Furthermore, we elaborate herein on how the value of Delta E plays a decisive role in determining the capture kinetics for the trapping of channel carriers in the interface dielectric defects in 1D nanodevices.