▎ 摘　　要

Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical-vapor-deposition growth temperature of graphene on copper. Due to the cooling of the graphene on a copper substrate, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spectroscopy, where a shift in the two-dimensional peak is observed and compared to our ab initio calculations of the graphene on a copper system as a function of strain, exhibiting a change in Fermi energy as a function of strain.