▎ 摘　　要

A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and transferred to the polyethylene terephthalate substrate. Then the poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric polymer layer film was used as the gate dielectric for the graphene FET. Based on the P(VDF-TrFE)/graphene heterojunction FET, Hall Bar structure was fabricated. The transport properties of the graphene channel at low temperature and retention characteristics at different temperature are investigated in detail. These special properties indicated that the GFET might be useful for many particular applications, such as a non-volatile memories, flexible electronic devices and phototransistors.