• 文献标题:   Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
  • 文献类型:   Article
  • 作  者:   LEE BK, PARK SY, KIM HC, CHO K, VOGEL EM, KIM MJ, WALLACE RM, KIM JY
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Texas Dallas
  • 被引频次:   191
  • DOI:   10.1063/1.2928228
  • 出版年:   2008

▎ 摘  要

We present a facile route which combines the functionalization of a highly oriented pyrolytic graphite surface with an atomic layer deposition (ALD) process to allow for conformal Al2O3 layers. While the trimethylaluminum (TMA)/H2O process caused selective deposition only along step edges, the TMA/O-3 process began to provide nucleation sites on the basal planes of the surface. O-3 pretreatment, immediately followed by the ALD process with TMA/O-3 chemistry, formed Al2O3 layers without any preferential deposition at the step edges. This is attributed to functionalization of graphene by ozone treatment, imparting a hydrophilic character which is desirable for ALD deposition. (C) 2008 American Institute of Physics.